8 Part Halfmoon Inch kanggo Pabrik Reaktor LPE

Tantalum Carbide Coated Planetary Rotation Disk Produsen

SiC Coated Barrel Susceptor kanggo LPE PE2061S Supplier

Tantalum Carbide Coating

Semikonduktor VeTek minangka produsen utama bahan Tantalum Carbide Coating kanggo industri semikonduktor. Penawaran produk utama kalebu bagean lapisan karbida tantalum CVD, bagean lapisan TaC sing disinter kanggo pertumbuhan kristal SiC utawa proses epitaksi semikonduktor. Lulus ISO9001, VeTek Semiconductor nduweni kontrol kualitas sing apik. VeTek Semiconductor darmabakti kanggo dadi inovator ing industri Tantalum Carbide Coating liwat riset lan pangembangan teknologi iteratif.

Produk utama yaikuTantalum Carbide coating defector ring, TaC coated diversion ring, TaC coated halfmoon parts, Tantalum Carbide Coated Planetary Rotation Disk (Aixtron G10), TaC Coated Crucible; TaC Coated Rings; TaC Coated Porous Graphite; Tantalum Carbide Coating Graphite Susceptor; TaC Coated Guide Ring; TaC Tantalum Carbide Coated Plate; TaC Coated Wafer Susceptor; TaC Coating Ring; TaC Coating Graphite Cover; TaC Coated Chunketc., kemurnian ngisor 5ppm, bisa ketemu syarat customer.

Grafit lapisan TaC digawe kanthi nutupi permukaan substrat grafit kanthi kemurnian dhuwur kanthi lapisan tantalum karbida kanthi proses Deposisi Uap Kimia (CVD) proprietary. Kauntungan ditampilake ing gambar ing ngisor iki:

Excellent properties of TaC coating graphite

Lapisan tantalum carbide (TaC) wis entuk perhatian amarga titik leleh sing dhuwur nganti 3880 ° C, kekuatan mekanik sing apik, kekerasan, lan tahan kanggo kejut termal, dadi alternatif sing apik kanggo proses epitaksi semikonduktor senyawa kanthi syarat suhu sing luwih dhuwur, kayata sistem Aixtron MOCVD lan proses epitaksi LPE SiC. Uga nduweni aplikasi sing akeh ing proses pertumbuhan kristal SiC metode PVT.

Fitur Utama:

●Stabilitas suhu

●kemurnian Ultra dhuwur

●Resistance kanggo H2, NH3, SiH4, Si

●Resistance kanggo stock termal

●Adhesion kuwat kanggo grafit

●Jangkoan lapisan conformal

● Ukuran nganti diameter 750 mm (Produsen mung ing China tekan ukuran iki)

Aplikasi:

●Pembawa wafer

● Susceptor pemanasan induktif

● unsur panas resistif

●disk satelit

●Sirah padusan

●Ring guide

●panrima LED Epi

●Nozzle injeksi

●Masking ring

● tameng panas

Lapisan tantalum karbida (TaC) ing bagean silang mikroskopis:

the microscopic cross-section of Tantalum carbide (TaC) coating

Parameter VeTek Semiconductor Tantalum Carbide Coating:

Sifat fisik lapisan TaC
Kapadhetan	14,3 (g/cm³)
Emisivitas spesifik	0.3
Koefisien ekspansi termal	6.3 10^-6/K
Kekerasan (HK)	2000 HK
Resistance	1×10^-5Om *cm
Stabilitas termal	<2500 ℃
owah-owahan ukuran grafit	-10~-20um
Ketebalan lapisan	Nilai khas ≥20um (35um±10um)

TaC coating data EDX：

EDX data of TaC coating

Data struktur kristal lapisan TaC:

unsur	Atom persen
	Pt. 1	Pt. 2	Pt. 3	Rata-rata
C K	52.10	57.41	52.37	53.96
M	47.90	42.59	47.63	46.04

TaC Coating Chuck TaC Coating Planetary Disk TaC Coated Plate TaC Coating Rotasi Plate panrima lapisan TaC Cover coating CVD TaC CVD TaC Coating Ring TaC Coating Plate

Lapisan Silicon Carbide

VeTek Semiconductor spesialisasi ing produksi produk Lapisan Silicon Carbide Ultra murni, lapisan iki dirancang kanggo ditrapake kanggo komponen grafit, keramik, lan logam refraktori sing diresiki.

Lapisan kemurnian dhuwur utamane ditargetake digunakake ing industri semikonduktor lan elektronik. Padha dadi lapisan protèktif kanggo operator wafer, susceptors, lan unsur panas, njogo saka lingkungan korosif lan reaktif ditemoni ing proses kayata MOCVD lan EPI. Proses kasebut minangka integral kanggo pangolahan wafer lan manufaktur piranti. Kajaba iku, lapisan kita cocog kanggo aplikasi ing tungku vakum lan pemanasan sampel, ing ngendi lingkungan vakum, reaktif, lan oksigen sing dhuwur ditemokake.

Ing VeTek Semiconductor, kita nawakake solusi lengkap kanthi kapabilitas toko mesin canggih. Iki ngidini kita nggawe komponen dhasar nggunakake grafit, keramik, utawa logam refraktori lan aplikasi lapisan keramik SiC utawa TaC ing omah. Kita uga nyedhiyakake layanan lapisan kanggo bagean sing disedhiyakake pelanggan, njamin keluwesan kanggo nyukupi kabutuhan sing beda-beda.

Produk Silicon Carbide Coating kita akeh digunakake ing Si epitaxy, SiC epitaxy, sistem MOCVD, proses RTP / RTA, proses etsa, proses etsa ICP / PSS, proses macem-macem jinis LED, kalebu LED biru lan ijo, UV LED lan jero-UV LED etc., kang dicocogake kanggo peralatan saka LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI lan ing.

Bagian reaktor sing bisa ditindakake:

Silicon Carbide Coating sawetara kaluwihan unik:

Silicon Carbide Coating several unique advantages

VeTek Semikonduktor Silicon Carbide Coating Parameter:

Sifat fisik dhasar saka lapisan CVD SiC
Properti	Nilai Khas
Struktur Kristal	FCC β fase polikristalin, utamané (111) oriented
Kapadhetan	3,21 g/cm³
Kekerasan	Kekerasan 2500 Vickers (beban 500g)
Ukuran Gandum	2~10μm
Kemurnian Kimia	99.99995%
Kapasitas panas	640 J·kg-1·K-1
Suhu Sublimasi	2700 ℃
Kekuatan lentur	415 MPa RT 4-titik
Modulus Young	430 Gpa 4pt tikungan, 1300 ℃
Konduktivitas termal	300W·m-1·K-1
Thermal Expansion (CTE)	4.5×10-6K-1

SEM data and structure of CVD SIC films

wafer

Substrat Waferyaiku wafer sing digawe saka bahan kristal tunggal semikonduktor. Substrat bisa langsung mlebu ing proses manufaktur wafer kanggo ngasilake piranti semikonduktor, utawa bisa diproses kanthi proses epitaxial kanggo ngasilake wafer epitaxial.

Substrat Wafer, minangka struktur pendukung dhasar piranti semikonduktor, langsung mengaruhi kinerja lan stabilitas piranti kasebut. Minangka "pondasi" kanggo manufaktur piranti semikonduktor, sawetara proses manufaktur kayata pertumbuhan film tipis lan litografi kudu ditindakake ing substrat.

Ringkesan jinis substrat:

●wafer silikon kristal tunggal: saiki materi substrat paling umum, digunakake digunakake ing Pabrik sirkuit terpadu (ICs), microprocessors, kenangan, piranti MEMS, piranti daya, etc.;

●Substrat SOI: digunakake kanggo kinerja dhuwur, sirkuit terpadu kurang daya, kayata sirkuit analog lan digital frekuensi dhuwur, piranti RF lan Kripik Manajemen daya;

●Substrat semikonduktor senyawa: Substrat Gallium arsenide (GaAs): piranti komunikasi gelombang mikro lan milimeter, lsp. Substrat Gallium nitride (GaN): digunakake kanggo amplifier daya RF, HEMT, lsp.Substrat silikon karbida (SiC): digunakake kanggo kendaraan listrik, konverter daya lan piranti daya liyane Indium phosphide substrate (InP): digunakake kanggo laser, photodetectors, etc.;

●Substrat safir: digunakake kanggo manufaktur LED, RFIC (radio frekuensi sirkuit terpadu), etc.;

Vetek Semiconductor minangka pemasok substrat SiC lan substrat SOI profesional ing China. kitaSubstrat SiC tipe semi-isolasi 4Hlan4H Semi Insulating Tipe SiC Substratdigunakake ing komponen utama peralatan manufaktur semikonduktor.

Vetek Semiconductor setya nyedhiyakake produk Wafer Substrat sing majeng lan bisa disesuaikan lan solusi teknis saka macem-macem spesifikasi kanggo industri semikonduktor. We Sincerely looking nerusake kanggo dadi supplier ing China.

ALD

Thin film preparation processes can be divided into two categories according to their film forming methods: physical vapor deposition (PVD) and chemical vapor deposition (CVD), of which CVD process equipment accounts for a higher proportion. Atomic layer deposition (ALD) is one of the chemical vapor deposition (CVD).

Atomic layer deposition technology (Atomic Layer Deposition, referred to as ALD) is a vacuum coating process that forms a thin film on the surface of a substrate layer by layer in the form of a single atomic layer. ALD technology is currently being widely adopted by the semiconductor industry.

Atomic layer deposition process:

Atomic layer deposition usually includes a cycle of 4 steps, which is repeated as many times as needed to achieve the required deposition thickness. The following is an example of ALD of Al₂O₃, using precursor substances such as Al(CH₃) (TMA) and O₂.

Step 1) Add TMA precursor vapor to the substrate, TMA will adsorb on the substrate surface and react with it. By selecting appropriate precursor substances and parameters, the reaction will be self-limiting.

Step 2) Remove all residual precursors and reaction products.

Step 3) Low-damage remote plasma irradiation of the surface with reactive oxygen radicals oxidizes the surface and removes surface ligands, a reaction that is also self-limiting due to the limited number of surface ligands.

Step 4) Reaction products are removed from the chamber.

Only step 3 differs between thermal and plasma processes, with H₂O being used in thermal processes and O₂ plasma being used in plasma processes. Since the ALD process deposits (sub)-inch-thick films per cycle, the deposition process can be controlled at the atomic scale.

1st Half-Cycle Purge 2nd Half-Cycle Purge

Highlights of Atomic Layer Deposition (ALD):

1) Grow high-quality thin films with extreme thickness accuracy, and only grow a single atomic layer at a time

2) Wafer thickness can reach 200 mm, with typical uniformity <±2%

3) Excellent step coverage even in high aspect ratio structures

4) Highly fitted coverage

5) Low pinhole and particle levels

6) Low damage and low temperature process

7) Reduce nucleation delay

8) Applicable to a variety of materials and processes

Compared with traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), the advantages of ALD are excellent three-dimensional conformality, large-area film uniformity, and precise thickness control, etc. It is suitable for growing ultra-thin films on complex surface shapes and high aspect ratio structures. Therefore, it is widely applicable to substrates of different shapes and does not require control of reactant flow uniformity.

Comparison of the advantages and disadvantages of PVD technology, CVD technology and ALD technology:

PVD technology	CVD technology	ALD technology
Faster deposition rate	Average deposition rate	Slower deposition rate
Thicker film thickness, poor control of nano-level film thickness precision	Medium film thickness (depends on the number of reaction cycles)	Atomic-level film thickness
The coating has a single directionality	The coating has a single directionality	Good uniformity of large-area film thickness
Poor thickness uniformity	Average step coverage	Best step coverage
Poor step coverage	\	Dense film without pinholes

Advantages of ALD technology compared to CVD technology (Source: ASM)

Vetek Semiconductor is a professional ALD Susceptor products supplier in China. Our ALD Susceptor, SiC coating ALD susceptor and ALD Planetary Susceptor are widely used in key components of semiconductor manufacturing equipment. Vetek Semiconductor is committed to providing advanced and customizable ALD Susceptor products and technical solutions of various specifications for the semiconductor industry. We sincerely look forward to becoming your supplier in China.

Produk Unggulan

Babagan awake dhewe

VeTek semikonduktor Technology Co., LTD, didegaké ing 2016, iku panyedhiya anjog saka bahan lapisan majeng kanggo industri semikonduktor. Pendhiri kita, mantan ahli saka Institut Bahan Akademi Ilmu Pengetahuan Cina, ngadegake perusahaan kasebut kanthi fokus kanggo ngembangake solusi mutakhir kanggo industri kasebut.

Penawaran produk utama kita kalebuLapisan silikon karbida (SiC) CVD, lapisan tantalum karbida (TaC)., akeh SiC, bubuk SiC, lan bahan SiC kemurnian dhuwur. Produk utama yaiku susceptor grafit sing dilapisi SiC, dering preheat, dering pangalihan sing dilapisi TaC, bagean halfmoon, lan liya-liyane, kemurnian ing ngisor 5ppm, bisa nyukupi syarat pelanggan.

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