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Ultra Pure Graphite Lower Halfmoon
  • Ultra Pure Graphite Lower HalfmoonUltra Pure Graphite Lower Halfmoon
  • Ultra Pure Graphite Lower HalfmoonUltra Pure Graphite Lower Halfmoon
  • Ultra Pure Graphite Lower HalfmoonUltra Pure Graphite Lower Halfmoon

Ultra Pure Graphite Lower Halfmoon

VeTek Semiconductor minangka panyedhiya utama kanggo Setengah Bulan Ngisor Grafit Murni Ultra Murni ing China, khusus ing bahan canggih sajrone pirang-pirang taun. Ultra Pure Graphite Lower Halfmoon dirancang khusus kanggo peralatan epitaxial SiC, njamin kinerja sing apik banget. Digawe saka grafit impor ultra-murni, nawakake linuwih lan daya tahan. Dolan maring pabrik kita ing China kanggo njelajah kanthi langsung Ultra Pure Graphite Lower Halfmoon.

Kirim Pitakonan

Deskripsi Produk

VeTek Semiconductor minangka produsen profesional sing darmabakti kanggo nyediakake Ultra Pure Graphite Lower Halfmoon. Produk kita Ultra Pure Graphite Lower Halfmoon dirancang khusus kanggo ruang epitaxial SiC lan nawakake kinerja lan kompatibilitas sing unggul karo macem-macem model peralatan.

Fitur:

Sambungan: VeTek Semiconductor Ultra Pure Graphite Lower Halfmoon dirancang kanggo nyambungake karo tabung kuarsa, nggampangake aliran gas kanggo nyopir rotasi basis operator.

Kontrol Suhu: Produk ngidini kontrol suhu, njamin kahanan optimal ing kamar reaksi.

Desain Non-Kontak: Dipasang ing njero ruangan reaksi, Ultra Pure Graphite Lower Halfmoon ora langsung ngubungi wafer, njamin integritas proses kasebut.

Skenario Aplikasi:

Ultra Pure Graphite Lower Halfmoon kita dadi komponen kritis ing ruang epitaxial SiC, sing mbantu njaga konten kotor ing ngisor 5 ppm. Kanthi ngawasi paramèter kayata ketebalan lan keseragaman konsentrasi doping, kita njamin lapisan epitaxial sing paling dhuwur.

Kompatibilitas:

VeTek Semiconductor's Ultra Pure Graphite Lower Halfmoon kompatibel karo macem-macem model peralatan, kalebu LPE, NAURA, JSG, CETC, NASO TECH, lan liya-liyane.

Sampeyan ngajak sampeyan ngunjungi pabrik ing China kanggo njelajah kanthi langsung Ultra Pure Graphite Lower Halfmoon.



Sifat fisik dhasar saka lapisan CVD SiC:

Sifat fisik dhasar saka lapisan CVD SiC
Properti Nilai Khas
Struktur Kristal FCC β fase polikristalin, utamané (111) oriented
Kapadhetan 3,21 g/cm³
Kekerasan Kekerasan 2500 Vickers (beban 500g)
Ukuran Gandum 2~10μm
Kemurnian Kimia 99.99995%
Kapasitas panas 640 J·kg-1·K-1
Suhu Sublimasi 2700 ℃
Kekuatan lentur 415 MPa RT 4-titik
Modulus Young 430 Gpa 4pt tikungan, 1300 ℃
Konduktivitas termal 300W·m-1·K-1
Thermal Expansion (CTE) 4.5×10-6K-1



VeTek Semiconductor Production Shop


Ringkesan rantai industri epitaksi chip semikonduktor:


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Kirim Pitakonan
Mangga bebas menehi pitakon ing formulir ing ngisor iki. Kita bakal mangsuli sampeyan ing 24 jam.
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