Ngarep > Produk > Tantalum Carbide Coating > Suku Cadang Proses Pertumbuhan Kristal Tunggal SiC > Tantalum Carbide Coated Tube kanggo Crystal Wutah
Tantalum Carbide Coated Tube kanggo Crystal Wutah
  • Tantalum Carbide Coated Tube kanggo Crystal WutahTantalum Carbide Coated Tube kanggo Crystal Wutah
  • Tantalum Carbide Coated Tube kanggo Crystal WutahTantalum Carbide Coated Tube kanggo Crystal Wutah
  • Tantalum Carbide Coated Tube kanggo Crystal WutahTantalum Carbide Coated Tube kanggo Crystal Wutah
  • Tantalum Carbide Coated Tube kanggo Crystal WutahTantalum Carbide Coated Tube kanggo Crystal Wutah

Tantalum Carbide Coated Tube kanggo Crystal Wutah

VeTek Semiconductor minangka Tantalum Carbide Coated Tube sing misuwur kanggo produsen Crystal Growth lan inovator ing China.We wis spesialis ing lapisan keramik kanggo akèh taun.Produk kita duwe kemurnian dhuwur lan resistance suhu dhuwur.We looking nerusake kanggo dadi partner long-term Panjenengan ing China.

Kirim Pitakonan

Deskripsi Produk

Sampeyan bisa yakin tuku Tabung Dilapisi Tantalum Carbide sing disesuaikan kanggo Pertumbuhan Kristal saka VeTek Semiconductor. We look nerusake kanggo kerjo bareng karo sampeyan, yen sampeyan pengin ngerti liyane, sampeyan bisa takon kita saiki, kita bakal reply kanggo sampeyan ing wektu!

VeTek Semiconductor nawakake Tantalum Carbide Coated Tube kanggo Crystal Growth sing dirancang khusus kanggo pertumbuhan kristal SiC nggunakake metode Pengangkutan Uap Fisik (PVT). Tabung grafit VeTek Semiconductor nduweni kemurnian dhuwur kanthi lapisan karbida tantalum CVD, njamin kinerja optimal ing pertumbuhan kristal SiC. Kristal SiC, sing dikenal minangka semikonduktor generasi katelu, nduweni potensial gedhe ing macem-macem aplikasi. Kanthi nggunakake Tabung Dilapisi Tantalum Carbide kanggo Pertumbuhan Kristal, peneliti lan profesional industri bisa ngoptimalake wutah SiC kanthi efektif lan ngasilake boule kristal SiC sing berkualitas tinggi. Apa sampeyan melu riset utawa produksi industri, produk kita nyedhiyakake solusi sing bisa dipercaya kanggo pertumbuhan kristal SiC sing efisien.

Kejabi tabung grafit sing dilapisi TaC, Semikonduktor VeTek uga nyedhiyakake cincin sing dilapisi TaC, crucible dilapisi TaC, grafit keropos sing dilapisi TaC, susceptor grafit sing dilapisi TaC, cincin panduan dilapisi TaC, piring dilapisi TaC Tantalum Carbide, Cincin Coating TaC, tutup grafit lapisan TaC, dilapisi TaC cuwilan kanggo tungku wutah kristal kaya ing ngisor iki:



Metode PVT SiC Crystal Growth


Parameter produk saka Tantalum Carbide Coated Tube kanggo Crystal Growth

Sifat fisik lapisan TaC
Kapadhetan 14,3 (g/cm³)
Emisivitas spesifik 0.3
Koefisien ekspansi termal 6.3 10-6/K
Kekerasan (HK) 2000 HK
Resistance 1 × 10-5 Ohm * cm
Stabilitas termal <2500 ℃
owah-owahan ukuran grafit -10~-20um
Ketebalan lapisan Nilai khas ≥20um (35um±10um)


Kinerja wafer sawise nggunakake komponen kita:


VeTek Semiconductor Production Shop


Ringkesan rantai industri epitaksi chip semikonduktor:


Hot Tags: Tabung Dilapisi Tantalum Carbide kanggo Pertumbuhan Kristal, China, Produsen, Supplier, Pabrik, Disesuaikan, Tuku, Lanjut, Awet, Digawe ing China

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Kirim Pitakonan

Mangga bebas menehi pitakon ing formulir ing ngisor iki. Kita bakal mangsuli sampeyan ing 24 jam.
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